Title :
A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness
Author :
Barak, J. ; Levinson, J. ; Akkerman, A. ; Hass, M. ; Victoria, M. ; Zentner, A. ; David, D. ; Even, O. ; Lifshitz, Y.
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
fDate :
6/1/1996 12:00:00 AM
Abstract :
It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU and SEL cross sections vs the energy deposited in this volume, σ ion(ε). These σion(ε) and d can be used for calculating the proton induced cross sections σp . A study of Harris HM65162 CMOS SRAMs demonstrates this method. The calculated σp is in good agreement with the experimental σp
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; CMOS SRAMs; Harris HM65162; SEL data; SEU data; energy deposition; long-range ions; proton induced cross sections; sensitive volume thickness; short-range ions; Acceleration; Electrostatics; Energy exchange; Ion accelerators; Proton accelerators; Silicon; Single event upset; Testing; Thickness measurement; Volume measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
