DocumentCode :
1095228
Title :
Low temperature direct bonding of nonhydrophilic surfaces
Author :
Bower, R.W.
Volume :
30
Issue :
9
fYear :
1994
fDate :
4/29/1994 12:00:00 AM
Firstpage :
693
Lastpage :
695
Abstract :
The authors have found that extremely strong bonds can be formed between wafer surfaces of LPCVD silicon dioxide after a dry plasma pretreatment. The bonded wafers were examined for bond yield, interfacial quality, and mechanical strength. Preliminary results indicate that successful low-temperature bonds can be formed to nonhydrophilic surfaces
Keywords :
integrated circuit technology; plasma applications; surface treatment; wafer bonding; LPCVD; bond yield; direct bonding; dry plasma pretreatment; interfacial quality; low-temperature bonds; mechanical strength; nonhydrophilic surfaces; wafer surfaces;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940497
Filename :
289181
Link To Document :
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