Title :
Modification of single event upset cross section of an SRAM at high frequencies
Author :
Buchner, S. ; Campbell, A.B. ; McMorrow, D. ; Melinger, J. ; Masti, M. ; Chen, Y.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program
Keywords :
CMOS memory circuits; SRAM chips; errors; CMOS SRAM; circuit simulator modeling program; clock frequency dependence; pulsed laser synchronization; single event upset cross section; Circuit simulation; Clocks; Discrete event simulation; Frequency dependence; Frequency synchronization; Laser modes; Optical pulses; Pulse circuits; Random access memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
