DocumentCode

1095253

Title

IIIB-4 noise associated with substrate current in fine-line NMOS field-effect transistors

Author

Jindal, Renuka P.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1971

Lastpage

1971

Keywords

Active noise reduction; Annealing; Electron traps; FETs; Impact ionization; MOS devices; Noise generators; Noise level; Noise measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21850

Filename

1484135