Title :
Amorphous silicon/amorphous silicon carbide heterojunctions applied to memory device structures
Author :
Sakata, Ichiro ; Yamanaka, Mitsuyuki ; Nagai, Kanto ; Sekigawa, Toshihiro ; Hayashi, Yasuhiro
Author_Institution :
Device Synthesis Sect., Electrotech. Lab., Ibaraki
fDate :
4/29/1994 12:00:00 AM
Abstract :
It has been proposed and experimentally confirmed that band-engineered hydrogenated amorphous silicon (a-Si:H)/hydrogenated amorphous silicon carbide (a-SiC:H) heterojunctions on c-Si can be applied to electrically programmable and erasable memory devices. A test diode with the structure c-Si/graded a-SiC:H/a-Si:H/uniform a-SiC:H/Al exhibits a large hysteresis in the C-V characteristic with a retention time of 0.8 s at room temperature
Keywords :
EPROM; aluminium; hydrogen; integrated circuit technology; integrated memory circuits; silicon; silicon compounds; 0.8 s; C-V characteristic; Si-SiC:H-Si:H-SiC:H-Al; c-Si/graded a-SiC:H/a-Si:H/uniform a-SiC:H/Al; electrically programmable memory devices; erasable memory devices; hysteresis; memory device structures; retention time; test diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940478
