Title :
Second generation single and two-step GaAs switched-current cells
Author :
Xiao, Shiwu ; Toumazou, Christofer
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
fDate :
4/29/1994 12:00:00 AM
Abstract :
A second generation GaAs switched-current (SI) memory cell is proposed. Transmission errors are reduced by the introduction of a novel GaAs two-step S2I cell, with simulated errors less than 0.05%
Keywords :
III-V semiconductors; analogue processing circuits; analogue storage; cellular arrays; gallium arsenide; switched networks; GaAs switched-current cells; second generation memory cell; simulated errors; transmission errors; two-step S2I cell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940485
