• DocumentCode
    1095312
  • Title

    n-step charge injection cancellation scheme for very accurate switched current circuits

  • Author

    Toumazou, Christofer ; Xiao, Shiwu

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
  • Volume
    30
  • Issue
    9
  • fYear
    1994
  • fDate
    4/29/1994 12:00:00 AM
  • Firstpage
    680
  • Lastpage
    681
  • Abstract
    An n-step charge injection cancellation scheme for switched current (SI) circuits is presented. By modifying a recently proposed two-step SI cell so that fine memories can be cascaded, n-stage fine cell schemes are now possible. The technique has been applied to CMOS class A, class AB and GaAs class A second generation cells
  • Keywords
    CMOS integrated circuits; analogue processing circuits; linear integrated circuits; switched filters; CMOS; class A; class AB; fine memories; n-stage fine cell schemes; n-step charge injection cancellation scheme; sampled data filters; second generation cells; switched current circuits; two-step SI cell;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940486
  • Filename
    289190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095312