Title :
Dynamic single event effects in a CMOS/thick SOI shift register
Author :
Gardic, F. ; Flament, O. ; Musseau, O. ; Brisset, C. ; Martinez, M. ; Brunet, J.P. ; Blanquart, L.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
We describe transient effects induced by high energy protons in shift registers processed in a CMOS/thick SOI technology. Devices are tested in dynamic mode. The dependence of cross section on frequency, signal rise time, angle of incidence and proton energy is studied and interpreted
Keywords :
CMOS logic circuits; flip-flops; integrated circuit testing; proton effects; shift registers; silicon-on-insulator; transient analysis; CMOS/thick SOI shift register; angle of incidence dependence; cross section; dynamic mode testing; dynamic single event effects; flip-flops; frequency dependence; high energy protons; proton energy dependence; signal rise time dependence; transient effects; CMOS process; CMOS technology; Clocks; Flip-flops; Frequency; Protons; Shift registers; Space technology; Testing; Vehicle dynamics;
Journal_Title :
Nuclear Science, IEEE Transactions on
