IVB-1 High-power conductivity-modulated FET´s (COMFET´s) with p-type channel

Author

Russell, J.P. ; Goodman, L.A. ; Goodman, A.M. ; Robinson, P.H. ; Neilson, Jeffrey M.

Volume

Issue

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1975

Lastpage

1976

Keywords

Degradation; Electron devices; FETs; Fabrication; MOSFET circuits; Power MOSFET; Power supplies; Quantum computing; Quantum mechanics; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1984.21863

Filename

1484148

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