Avalanche semiconductor radiation detectors

Operation of novel avalanche semiconductor detectors, produced on the basis of heterojunctions Si-SiC and Si-Si_xO_y, is described. A uniform avalanche process with gain from 10³ to 10⁵ can be reached depending on the conductivity of the SiC and Si_xO_y layers. Two types of avalanche photodetectors designed for applications in the wavelength range 500-1000 mm with quantum efficiency 60±10% (650 nm) and 200-700 nm with quantum efficiency 60±15% (450 nm) are presented