Title :
IVB-3 surface mobility of holes and electrons in silicon at low temperatures
Author :
Kenneth, K.O. ; Cottrell, P.E.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Charge carrier processes; Degradation; Electron mobility; MOSFET circuits; Quantization; Quantum computing; Quantum mechanics; Silicon; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21865
