Title :
IVB-5 nearly-ideal unguarded VLSI Schottky-barrier diodes
fDate :
12/1/1984 12:00:00 AM
Keywords :
Charge carrier processes; Circuits; Gold; Impact ionization; Large scale integration; Schottky barriers; Schottky diodes; Silicides; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21867