DocumentCode :
1095456
Title :
IVB-6 impact ionization coefficients in 〈100〉 and 〈111〉 silicon
Author :
Robbins, V.M. ; Wang, Tao ; Tang, Ju ; Hess, K. ; Stillman, G.E. ; McIntyre, R.J. ; Webb, P.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1977
Lastpage :
1978
Keywords :
Charge carrier processes; Circuits; Gold; Impact ionization; Large scale integration; Schottky barriers; Schottky diodes; Silicides; Silicon; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21868
Filename :
1484153
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095456
