• DocumentCode
    1095479
  • Title

    IVB-7 an impact ionization model for 2D device simulation

  • Author

    Chan, N. ; Thurgate, T.

  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1978
  • Lastpage
    1978
  • Keywords
    CMOS process; Degradation; Electrons; Heterojunction bipolar transistors; Impact ionization; Indium tin oxide; MOS devices; Semiconductor device modeling; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21869
  • Filename
    1484154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095479