Title :
VA-2 GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
Author :
Asbeck, P.M. ; Miller, Douglas L. ; Anderson, R.J. ; Eisen, F.H.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21871
