DocumentCode :
1095511
Title :
VA-4 radiative recombination in heterojunction bipolar transistors
Author :
Hayes, J.R. ; Leheny, R.F. ; Temkin, H. ; Gossard, Arthur C. ; Wiegmann, W.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1979
Lastpage :
1980
Keywords :
Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Indium phosphide; Logic; Microwave transistors; Photonic band gap; Radiative recombination;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21872
Filename :
1484157
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095511
