DocumentCode :
1095527
Title :
VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits
Author :
Masum Choudhury, A.N.M. ; Tabatabaie-Alavi, K. ; Vlcek, J.C. ; Kanbe, H. ; Fonstad, C.G.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1980
Lastpage :
1980
Keywords :
Digital integrated circuits; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic; MESFETs; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21874
Filename :
1484159
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095527
