Title :
VA-6 Large-barrier-height amorphous Si-Ge-B/GaAs Schottky contacts and GaAs-MASFET´s
Author :
Murase, K. ; Suzuki, M. ; Amemiya, Yoshiteru ; Kurumada, K.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Amorphous materials; Amorphous silicon; FETs; Gallium arsenide; MESFETs; Ohmic contacts; Schottky barriers; Transconductance; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21875
