Title :
VB-3 passivation effects in polysilicon by hydrogen implantation
Author :
Greve, D.W. ; Chen, D.L. ; Guzman, A.M.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Boron; Conductivity; Grain boundaries; Hydrogen; Implants; Passivation; Plasma immersion ion implantation; Plasma temperature; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21879
