DocumentCode

1095592

Title

VB-3 passivation effects in polysilicon by hydrogen implantation

Author

Greve, D.W. ; Chen, D.L. ; Guzman, A.M.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1982

Lastpage

1982

Keywords

Annealing; Boron; Conductivity; Grain boundaries; Hydrogen; Implants; Passivation; Plasma immersion ion implantation; Plasma temperature; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21879

Filename

1484164