Title :
VB-4 effects of Si3N4and Al films on the passivation of poly-Si films
Author :
Rodder, M. ; Madan, S. ; Antoniadis, D. ; Kikkawa, Takamaro
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Dielectric devices; Doping; Grain boundaries; Hydrogen; Implants; MOSFETs; Passivation; Plasma temperature; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21880
