VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

Author

Banerjee, Sanjay K. ; Elahy, M. ; Shichijo, H. ; Pollack, G.P. ; Richardson, W.F. ; Malhi, S.D.S. ; Shah, Asmi H. ; Chatterjee, P.K. ; Lam, H.W. ; Womack, R.H.

Volume

Issue

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1983

Lastpage

1983

Keywords

Doping; Fabrication; Grain boundaries; Implants; Instruments; Leakage current; MOSFET circuits; Passivation; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1984.21881

Filename

1484166

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