Title :
VB-6 Charge-based large-signal modeling of thin-film SOI MOSFET´s
Author :
Lim, H.K. ; Fossum, Jerry G.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Boron; Capacitance; Charge transfer; Diodes; Insulation; MOSFET circuits; Silicon; Thin film circuits; Three-dimensional integrated circuits; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21882
