مرکز منطقه ای اطلاع رساني علوم و فناوري - VB-7 MOS transistors fabricated on multiple silicon-insulator layers

DocumentCode :

1095625

Title :

VB-7 MOS transistors fabricated on multiple silicon-insulator layers

Author :

Sugiura, Shinya ; Yoshida, Takafumi ; Kaneko, Tetsuya ; Shono, Ken ; Dumin, D.J.

Volume :

Issue :

fYear :

1984

fDate :

12/1/1984 12:00:00 AM

Firstpage :

1983

Lastpage :

1984

Keywords :

Boron; Circuits; Conducting materials; Diodes; Insulation; Luminescence; MOSFETs; Ring oscillators; Silicon; Threshold voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1984.21883

Filename :

1484168

Link To Document :