VIA-2 electron velocity-field characteristics of GaAs and In0.53Ga0.47As below the Gunn effect threshold

Author

Haase, M.A. ; Tabatabaie, N. ; Robbins, V.M. ; Stillman, G.E.

Volume

Issue

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1984

Lastpage

1985

Keywords

Electrons; Frequency; Gallium arsenide; Gunn devices; Laboratories; Optical scattering; Oscillators; Power generation; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1984.21885

Filename

1484170

Link To Document