DocumentCode

1095661

Title

VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide

Author

Cheng, C.L. ; Lalevic, B. ; Chang, T.Y. ; Coldren, Larry A.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1985

Lastpage

1985

Keywords

Buffer layers; Electron mobility; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; MESFETs; Microwave FETs; Silicon; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21886

Filename

1484171