Title :
VIB-2 Separation of generation-recombination and 1/f noise components in GaAs FET´s
Author :
Forbes, L. ; Canfield, P. ; Gleason, R.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Capacitance; Doping; Electromagnetic heating; FETs; Gallium arsenide; Gettering; Microwave devices; Noise generators; Substrates; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21890
