DocumentCode
1095738
Title
VIB-6 GaAs self-aligned p-channel MESFET for high-speed complementary circuit
Author
Nakayama, Yoshinori ; Shimizu, Hiroshi ; Suyama, Koichi ; Ohnishi, Tadasuke ; Nishi, Hidetaka
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1987
Lastpage
1988
Keywords
Annealing; Delay estimation; Electron devices; Gallium arsenide; Inverters; Laboratories; MESFET circuits; Power dissipation; Substrates; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21894
Filename
1484179
Link To Document