DocumentCode :
1095738
Title :
VIB-6 GaAs self-aligned p-channel MESFET for high-speed complementary circuit
Author :
Nakayama, Yoshinori ; Shimizu, Hiroshi ; Suyama, Koichi ; Ohnishi, Tadasuke ; Nishi, Hidetaka
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1987
Lastpage :
1988
Keywords :
Annealing; Delay estimation; Electron devices; Gallium arsenide; Inverters; Laboratories; MESFET circuits; Power dissipation; Substrates; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21894
Filename :
1484179
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095738
