DocumentCode :
1095762
Title :
VIB-7 GaAs MESFET ring oscillator on Si substrate
Author :
Ishida, Tomoyuki ; Nonaka, Tomomi ; Kawarada, Y. ; Sano, Yousuke ; Akiyama, Masanori ; Kaminishi, K.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1988
Lastpage :
1988
Keywords :
Crystallization; Diode lasers; Gallium arsenide; Laboratories; Lattices; MESFETs; Molecular beam epitaxial growth; Research and development; Ring oscillators; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21896
Filename :
1484181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095762