DocumentCode
1095764
Title
Temperature dependence of current gains in high C-doped base HBTs
Author
Rezazadeh, Ali A.
Volume
30
Issue
10
fYear
1994
fDate
5/12/1994 12:00:00 AM
Firstpage
825
Lastpage
826
Abstract
The temperature dependencies of current gain are investigated in both AlGaAs/GaAs and InGaP/GaAs HBTs. Various Npn HBT structures with high C-doped bases, grown by MOCVD, have been fabricated with identical processing steps. Measured results show that base bulk recombination current plays an important role in maintaining the current gain at high temperature. In addition it is shown that both space-charge and surface recombination currents are the cause of current gain reduction with temperature
Keywords
III-V semiconductors; aluminium compounds; carbon; electron-hole recombination; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; space charge; AlGaAs-GaAs:C; InGaP-GaAs:C; MOCVD; Npn HBT structures; base bulk recombination current; current gain reduction; current gains; high C-doped base; space-charge; surface recombination currents; temperature dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940559
Filename
289245
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