• DocumentCode
    1095773
  • Title

    Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65 As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substrate

  • Author

    Lu, S. ; Huang, C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    823
  • Lastpage
    825
  • Abstract
    A novel electronic device using a two dimensional electron gas produced by the strain-induced electric field in a [111] growth-axis In 0.2Ga0.8As/Al0.35Ga0.65As/In 0.2Ga0.8A s/GaAs strained layer structure without modulation doping is reported. Two dimensional electron gas densities greater than 1011 cm-2 were observed both at room temperature and 77°K. A field effect transistor using this strain-layer structure was fabricated successfully
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; piezoelectric devices; piezoelectric semiconductors; semiconductor superlattices; two-dimensional electron gas; (111)B GaAs substrate; 2DEG; GaAs; HEMT; In0.2Ga0.8As-Al0.35Ga0.65 As -In0.2Ga0.8As-GaAs; PEFET; TEGFET; [111] growth-axis; field effect transistor; piezoelectric FET; strain-induced electric field; strained layer structure; two dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940432
  • Filename
    289246
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095773