DocumentCode :
1095810
Title :
Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures
Author :
Shul, R.J. ; Schneider, R.P. ; Constantine, C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Volume :
30
Issue :
10
fYear :
1994
fDate :
5/12/1994 12:00:00 AM
Firstpage :
817
Lastpage :
819
Abstract :
Anisotropic dry etching of GaInP/AlGaInP heterostructures has been achieved for the first time in a high-ion-density electron cyclotron resonance (ECR)-generated plasma. Structures consisting of AlInP/(GaInP/AlGaInP)/AlInP and AlGaAs/(GaInP/AlGaInP)/AlGaAs heterostructures have been etched in a CH4/H2/Cl 2/BCl3/Ar plasma with smooth sidewalls and surface morphologies
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junctions; sputter etching; surface structure; CH4/H2/Cl2/BCl3/Ar plasma; GaInP-AlGaInP; GaInP/AlGaInP heterostructures; H2-Cl2-BCl3-Ar; anisotropic dry etching; electron cyclotron resonance etching; high-ion-density ECR-generated plasma; smooth morphologies; smooth sidewalls;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940550
Filename :
289250
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095810
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