• DocumentCode
    1095839
  • Title

    Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

  • Author

    Loreck, L. ; Dämbkes, H. ; Heime, K. ; Ploog, K. ; Weimann, G.

  • Author_Institution
    Universitat Duisburg, Duisburg, FRG
  • Volume
    5
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    9
  • Lastpage
    11
  • Abstract
    Low-frequency noise of (AlGa)As-GaAs heterostructures grown by molecular-beam epitaxy was investigated. The temperature of the samples was varied between 100 and 400 K. In the frequency range from 1 Hz to 25 kHz noise spectra can be described as superposition of several generation-recombination (GR) noise components. Four deep levels (E = 0.40, 0.42, 0.54, 0.60 eV) were detected, three of which are in agreement with those measured independently by deep-level transient spectroscopy (DLTS).
  • Keywords
    Electron mobility; Electron traps; Frequency; HEMTs; Low-frequency noise; Noise generators; Noise measurement; Noise shaping; Semiconductor device noise; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25812
  • Filename
    1484188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095839