• DocumentCode
    1095854
  • Title

    380 ps, 9.5 mW Josephson 4 Kbit RAM

  • Author

    Nagasawa, S. ; Hashimoto, Yo ; Numata, Hidetoshi ; Tsuchida, Satoshi ; Tahara, S.

  • Author_Institution
    Fundamental Res. Labs., NEC Corp., Tsukuba
  • Volume
    30
  • Issue
    10
  • fYear
    1994
  • fDate
    5/12/1994 12:00:00 AM
  • Firstpage
    761
  • Lastpage
    762
  • Abstract
    The authors have developed a Josephson 4 Kbit RAM with vortex transitional memory cells and resistor coupled drivers. The RAM is fabricated by 1.5 μm Nb technology with approximately 21000 Nb/AlO x/Nb Josephson junctions. 380 ps access time, 98.6% bit yield, and 9.5 mW power dissipation have been experimentally obtained in the 4 Kbit RAM chip
  • Keywords
    aluminium compounds; niobium; random-access storage; superconducting memory circuits; 1.5 μm Nb technology; 380 ps; 4 kbit; 9.5 mW; Josephson 4 Kbit RAM; Nb-AlO-Nb; Nb/AlOx/Nb Josephson junctions; RAM chip; access time; power dissipation; resistor coupled drivers; vortex transitional memory cells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940535
  • Filename
    289255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095854