Title :
No blister formation Pd/Pt double metal gate MISFET hydrogen sensors
Author :
Choi, S.-Y. ; Takahashi, K. ; Matsuo, T.
Author_Institution :
Tohoku University, Sendai, Japan
fDate :
1/1/1984 12:00:00 AM
Abstract :
Blister formation in palladium gate MISFET hydrogen sensors occurs even at low hydrogen pressures and the sensors fail in long-time operation. The blisters in the Pd gate are due to hydrogen-induced lattice expansion of the Pd film. By making a double metal gate of Pd/Pt, the problem is avoided without any loss of the hydrogen sensitivity.
Keywords :
Absorption; Gold; Hydrogen; Lattices; MISFETs; Metal-insulator structures; Niobium; Palladium; Stress; Thermal sensors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25814
