• DocumentCode
    1095867
  • Title

    Electroabsorption Al0.48In0.52As p-i-n avalanche photodiodes grown by molecular beam epitaxy

  • Author

    Capasso, F. ; Alavi, K. ; Cho, A.Y. ; Hutchinson, A.L.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    5
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    The operation of the first Al0.48In0.52As p-i-n avalanche photodiode is reported. The i layer has a background doping ≲1014/ cm3and the diodes have breakdown voltages in excess of -80 V. A strong enhancement of the photoresponse accompanied by avalanche gain at wavelengths near and beyond the band gap is observed, due to the Franz-Keldysh effect. At short wavelengths, an avalanche gain of 50 was measured. A detailed study of different etches to achieve optimum taper of the mesas was also made.
  • Keywords
    Avalanche photodiodes; Doping; Etching; Indium phosphide; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Photonic band gap; Schottky diodes; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25815
  • Filename
    1484191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095867