GaAs MESFET´s made by ion implantation into MOCVD Buffer layers

Low-noise GaAs metal-semiconductor field-effect transistors (MESFET´s) have been made using ion-implanted metal organic chemical vapor deposition (MOCVD) buffer layers. A noise figure of 1.46 dB with 10.20 associated gain has been achieved at 12 GHz for a 0.5-µm gatelength by 300-µm gatewidth FET device. This result demonstrates that excellent GaAs LNFET´s can be made by ion implantation into MOCVD buffer layers, comparable to the best results obtained from similar devices made by AsCl3vapor-phase epitaxy and molecular-beam epitaxy.