• DocumentCode
    1095884
  • Title

    Double-implanted GaAs complementary JFET´s

  • Author

    Zuleeg, R. ; Notthoff, J.K. ; Troeger, G.L.

  • Author_Institution
    McDonnell Douglas Microelectronics Center, Huntington Beach, CA
  • Volume
    5
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    21
  • Lastpage
    23
  • Abstract
    The fabrication and performance characteristics of double-implanted GaAs complementary junction field-effect transistors (JFET´s) suitable for low-power digital integrated circuit applications are described. Effective mobilities for the n-channel enhancement-mode JFET are 3500 cm2/V.s and for the p-channel 300 cm2/V.s. Experimental results of an ultra-low-power static RAM are presented.
  • Keywords
    Delay effects; Dielectrics; FETs; Gallium arsenide; Implants; MESFETs; Power dissipation; Random access memory; Read-write memory; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25817
  • Filename
    1484193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095884