• DocumentCode
    1095919
  • Title

    Digital NMOS test circuits fabricated in silicon MBE

  • Author

    Swartz, R.G. ; Chin, G.M. ; Voshchenkov, A.M. ; Ko, P. ; Wooley, B.A. ; Finegan, S.N. ; Bosworth, R.H.

  • Author_Institution
    Bell Laboratories, Holmdel, NJ
  • Volume
    5
  • Issue
    2
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    29
  • Lastpage
    31
  • Abstract
    Integrated digital test circuits, as well as discrete NMOS devices, have been fabricated in epitaxial layers produced by silicon molecular-beam epitaxy (Si-MBE). The performance of these circuits and devices was found to be very similar to that of identical components processed in standard substrates. Unusually high low-field mobility was measured in the MBE MOSFET´s.
  • Keywords
    Chemicals; Circuit testing; Conductivity; Epitaxial layers; Heat transfer; Ion beams; MOS devices; Molecular beam epitaxial growth; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25821
  • Filename
    1484197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095919