Be-implanted GaInAsP/InP double heterojunction laser diodes

Beryllium ion implantation has been used to fabricate broad-area GaInAsP/InP laser diodes operating at a wavelength of 1.3 μm, which have threshold current densities comparable to those obtained using conventional Zn doping during the epitaxial growth process. Both a Be-implant schedule which results in minimal diffusion of the implanted Be and one which results in significant diffusion have been investigated. On most wafers, the average normalized threshold current density ( ) using either implant schedule has been typically 6-8 kA/cm². μm. The lowest Jnomobserved was 4.2 kA/cm². μm and was measured on a "nondiffused" implanted laser.