Title :
Integrated FET and charge reset device for gamma spectrometers
Author :
Nashashibi, T. ; Sangsingkeow, P.
Author_Institution :
Link Anal. Ltd., High Wycombe, UK
fDate :
4/1/1991 12:00:00 AM
Abstract :
A specially designed and processed five-terminal device incorporating a low-noise field-effect transistor and an integrated charge-restoration mechanism has been used with an HPGe (high-purity germanium) coaxial detector to produce a high-rate, high-resolution gamma spectrometer. A controlled charge pulse is injected into the FET channel and then collected by the gate to discharge the feedback capacitor and reset the amplifier. The reset time is fast, and the high resolution is maintained at energy rate products in excess of 1011 eV/s. The FET input capacitance is 8 pF, and the noise voltage is 0.45 nV/√Hz at optimum temperature. When it is used with a 22-pF HPGe n-type coaxial detector, the total pulser noise is 420 eV at 12-μs amplifier peaking time
Keywords :
field effect integrated circuits; gamma-ray spectrometers; nuclear electronics; semiconductor counters; FET input capacitance; Ge detector; HPGe; amplifier; charge reset device; coaxial detector; controlled charge pulse; feedback capacitor; five-terminal device; gamma spectrometers; high-purity; high-resolution; integrated FET; integrated charge-restoration mechanism; low-noise field-effect transistor; n-type; noise voltage; total pulser noise; Capacitors; Coaxial components; FETs; Feedback; Gamma ray detection; Gamma ray detectors; Germanium; Process design; Pulse amplifiers; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
