DocumentCode :
1095946
Title :
Monolithic, radiation hard charge sensitive preamplifier using diffused N-channel junction field effect transistors
Author :
Radeka, V. ; Rescia, S. ; Manfredi, P.F. ; Speziali, V.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
38
Issue :
2
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
83
Lastpage :
88
Abstract :
A monolithic preamplifier entirely based on epitaxial channel, diffused-gate N-JFET has been designed and thoroughly investigated by means of SPICE simulation and breadboard implementation. Performance, tolerances, and matching of the devices are remarkably good, and the excess noise can be reduced in future runs. A preamplifier has been wired using monolithic JFET and is working according to predictions. The preamplifier is intended for applications with ionization chamber calorimeters in the SSC (Superconducting Super Collider) environment at processing times of about 50 ns
Keywords :
calorimeters; field effect integrated circuits; ionisation chambers; junction gate field effect transistors; nuclear electronics; preamplifiers; proton accelerators; radiation hardening (electronics); storage rings; synchrotrons; SPICE simulation; SSC; Superconducting Super Collider; breadboard implementation; diffused N-channel junction field effect transistors; diffused-gate N-JFET; epitaxial channel; excess noise; ionization chamber calorimeters; matching; monolithic preamplifier; radiation hard charge sensitive preamplifier; tolerances; Circuits; Ionizing radiation; JFETs; MOSFETs; Noise figure; Preamplifiers; Production; SPICE; Silicon; Transconductance;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.289267
Filename :
289267
Link To Document :
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