Monolithic, radiation hard charge sensitive preamplifier using diffused N-channel junction field effect transistors

Author

Radeka, V. ; Rescia, S. ; Manfredi, P.F. ; Speziali, V.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

38

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

83

Lastpage

88

Abstract

A monolithic preamplifier entirely based on epitaxial channel, diffused-gate N-JFET has been designed and thoroughly investigated by means of SPICE simulation and breadboard implementation. Performance, tolerances, and matching of the devices are remarkably good, and the excess noise can be reduced in future runs. A preamplifier has been wired using monolithic JFET and is working according to predictions. The preamplifier is intended for applications with ionization chamber calorimeters in the SSC (Superconducting Super Collider) environment at processing times of about 50 ns

Keywords

calorimeters; field effect integrated circuits; ionisation chambers; junction gate field effect transistors; nuclear electronics; preamplifiers; proton accelerators; radiation hardening (electronics); storage rings; synchrotrons; SPICE simulation; SSC; Superconducting Super Collider; breadboard implementation; diffused N-channel junction field effect transistors; diffused-gate N-JFET; epitaxial channel; excess noise; ionization chamber calorimeters; matching; monolithic preamplifier; radiation hard charge sensitive preamplifier; tolerances; Circuits; Ionizing radiation; JFETs; MOSFETs; Noise figure; Preamplifiers; Production; SPICE; Silicon; Transconductance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.289267

Filename

289267