Title :
Temperature dependence of latchup in CMOS circuits
Author :
Dooley, J.G. ; Jaeger, R.C.
Author_Institution :
Auburn University, Auburn, AL
fDate :
2/1/1984 12:00:00 AM
Abstract :
Measurements of the temperature dependence of holding current in bulk CMOS devices indicate that a substantial improvement in latchup resistance may be achieved by liquid-nitrogen temperature operation of CMOS technology.
Keywords :
CMOS technology; Circuits; Current measurement; Logic gates; MOS devices; Semiconductor device measurement; Stress; Temperature dependence; Temperature distribution; Testing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25825
