A new GaAsP—InGaAs strained-layer super-lattice light-emitting diode

Author

Bedair, S.M. ; Katsuyama, T. ; Timmons, M. ; Tischler, M.A.

Author_Institution

North Carolina State University, Raleigh, NC

Volume

5

Issue

2

fYear

1984

fDate

2/1/1984 12:00:00 AM

Firstpage

45

Lastpage

47

Abstract

The GaAs1 - yPy-InxGa1 - xAS superlattice (SL) system with y = 2x has an average lattice constant equal to that of GaAs, thus allowing the fabrication of lattice-matched strained-layer double heterostructures. This new system can provide a large conduction band-edge discontinuity and higher electron mobility than the AlGaAs-GaAs system. The strained layers and subsequent GaAs layers epitaxially grown on them were found to be of high quality. Light-emitting diodes (LED´s), based on this new superlattice, have been fabricated with emission in the wavelength range 0.9-1.1 µm. These LED´s have operated for 200 h without any degradation in the output emission intensity. Also a dual-wavelength three-terminal device LED emitting near 0.87 and 0.9 µm has been fabricated. This is one of the first demonstrations of the potential applications of strained-layer superlattices (SLS).

Keywords

Buffer layers; Electron mobility; Fabrication; Gallium arsenide; Indium gallium arsenide; Laser sintering; Lattices; Light emitting diodes; Substrates; Superlattices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/EDL.1984.25827

Filename

1484203