• DocumentCode
    1095989
  • Title

    Silicon Schottky-barrier modification by ion-implantation damage

  • Author

    Ashok, S. ; Mogro-Campero, A.

  • Author_Institution
    Pennsylvania State University, University Park, PA
  • Volume
    5
  • Issue
    2
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    Low-energy (5-keV) high-dose (1015cm-2) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.
  • Keywords
    Argon; Circuits; Etching; Implants; Impurities; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25828
  • Filename
    1484204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095989