DocumentCode :
1096089
Title :
Switching characteristics of laser diode switch
Author :
Ikeda, Masahiro
Author_Institution :
NTT Opto-electronics Labs., Kanagawa, Japan
Volume :
19
Issue :
2
fYear :
1983
fDate :
2/1/1983 12:00:00 AM
Firstpage :
157
Lastpage :
164
Abstract :
Switching characteristics for laser diode switches controlled by the forward injection current have been studied. Pumping rate dependences for the internal gain and for the extinction ratio, defined as the ratio of output signal power to total power, were analyzed numerically and experimentally. They were in good agreement. Turn-on response time is determined mainly by the space-charge capacitance and was seen typically to be ten times the carrier lifetime. The fall time was almost equal to the carrier lifetime. A method to reduce turn-on response time by preshaping the drive pulse is also analyzed. The turn-on response time could be reduced to about 1 ns.
Keywords :
Electrooptic switches; Semiconductor lasers; Bandwidth; Communication switching; Delay; Diode lasers; Extinction ratio; Optical control; Optical interferometry; Optical pumping; Optical switches; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071838
Filename :
1071838
Link To Document :
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