DocumentCode :
1096100
Title :
Q-switched semiconductor diode lasers
Author :
Tsang, Dean Z. ; Walpole, James N.
Author_Institution :
MIT Lincoln Lab., Lexington, MA
Volume :
19
Issue :
2
fYear :
1983
fDate :
2/1/1983 12:00:00 AM
Firstpage :
145
Lastpage :
156
Abstract :
Diode lasers with an intracavity electroabsorption modulator have been operated with full on/off modulation at rates of 3 GHz. In addition, modulation of the lasers has been shown up to a detector-limited frequency of 6 GHz. A new model of these devices, which includes amplified spontaneous emission and high gain is developed in this paper. A quasi-static gain approximation is introduced and the dynamics of the electron and photon population are modeled by three coupled nonlinear difference equations which can be numerically solved with very little computation time. The model predicts the possibility of a new mode of Q -switched operation with the capacity for repetition rates of tens of gigahertz and binary pulse position modulation at rates of the order of 10 Gbits/s.
Keywords :
Optical modulation/demodulation; Q-switched lasers; Semiconductor lasers; Couplings; Difference equations; Diode lasers; Electrons; Frequency; Laser modes; Pulse modulation; Semiconductor diodes; Semiconductor lasers; Spontaneous emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071839
Filename :
1071839
Link To Document :
بازگشت