Title :
GaAs IMPATT diodes for 60 GHz
Author :
Adlerstein, M.G. ; Chu, S.L.G.
Author_Institution :
Raytheon Research Division, Lexington, MA
fDate :
3/1/1984 12:00:00 AM
Abstract :
High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.
Keywords :
Admittance; Circuit testing; Diodes; Doping profiles; Gallium arsenide; Molecular beam epitaxial growth; Radio frequency; Silicon; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25844
