Charge-packet-initiated switching of metal—tunnel-oxide—silicon (MTOS) junctions

We report the switching of a bistable metal-tunnel-oxide-silicon (MTOS) junction from a low-current state to a high-current state by the insertion of a charge packet of minority carriers from a charge-coupled device input structure. For the 33-Å tunnel oxide reported in this letter, a switching threshold of 630 pC for a 40 mils²device area was observed. The transient switching time is approximately 10-100 ms, depending upon the size of the injected charge packet.