DocumentCode :
1096264
Title :
Si(Li) detectors with thin dead layers for low energy X-ray detection
Author :
Rossington, C.S. ; Walton, J.T. ; Jaklevic, J.M.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Volume :
38
Issue :
2
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
239
Lastpage :
243
Abstract :
Regions of incomplete charge collection, or dead layers, are compared for Si(Li) detectors fabricated with Au and Pd entrance-window electrodes. The dead layers were measured by characterizing the detector spectral response to X-ray energies above and below the Si Kα absorption edge. It was found that Si(Li) detectors with Pd electrodes exhibit consistently thinner effective Si dead layers than those with Au electrodes. It is demonstrated that the minimum thickness required for low-resistivity Pd electrodes is thinner than that required for low-resistivity Au electrodes, which further reduces the signal attenuation in Pd/Si(Li) detectors. A model based on Pd compensation of oxygen vacancies in the SiO2 at the entrance-window Si(Li) surface is proposed to explain the observed differences in detector dead-layer thickness
Keywords :
X-ray detection and measurement; semiconductor counters; Au; Kα absorption edge; Pd; Pd compensation; Si(Li) detectors; Si:Li; detector spectral response; entrance-window electrodes; incomplete charge collection; low energy X-ray detection; minimum thickness; signal attenuation; thin dead layers; Conductivity; Electrodes; Geometry; Germanium; Gold; Laboratories; Radiation detectors; Silicon; X-ray detection; X-ray detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.289303
Filename :
289303
Link To Document :
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