• DocumentCode
    1096264
  • Title

    Si(Li) detectors with thin dead layers for low energy X-ray detection

  • Author

    Rossington, C.S. ; Walton, J.T. ; Jaklevic, J.M.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    38
  • Issue
    2
  • fYear
    1991
  • fDate
    4/1/1991 12:00:00 AM
  • Firstpage
    239
  • Lastpage
    243
  • Abstract
    Regions of incomplete charge collection, or dead layers, are compared for Si(Li) detectors fabricated with Au and Pd entrance-window electrodes. The dead layers were measured by characterizing the detector spectral response to X-ray energies above and below the Si Kα absorption edge. It was found that Si(Li) detectors with Pd electrodes exhibit consistently thinner effective Si dead layers than those with Au electrodes. It is demonstrated that the minimum thickness required for low-resistivity Pd electrodes is thinner than that required for low-resistivity Au electrodes, which further reduces the signal attenuation in Pd/Si(Li) detectors. A model based on Pd compensation of oxygen vacancies in the SiO2 at the entrance-window Si(Li) surface is proposed to explain the observed differences in detector dead-layer thickness
  • Keywords
    X-ray detection and measurement; semiconductor counters; Au; Kα absorption edge; Pd; Pd compensation; Si(Li) detectors; Si:Li; detector spectral response; entrance-window electrodes; incomplete charge collection; low energy X-ray detection; minimum thickness; signal attenuation; thin dead layers; Conductivity; Electrodes; Geometry; Germanium; Gold; Laboratories; Radiation detectors; Silicon; X-ray detection; X-ray detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.289303
  • Filename
    289303