DocumentCode
1096264
Title
Si(Li) detectors with thin dead layers for low energy X-ray detection
Author
Rossington, C.S. ; Walton, J.T. ; Jaklevic, J.M.
Author_Institution
Lawrence Berkeley Lab., CA, USA
Volume
38
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
239
Lastpage
243
Abstract
Regions of incomplete charge collection, or dead layers, are compared for Si(Li) detectors fabricated with Au and Pd entrance-window electrodes. The dead layers were measured by characterizing the detector spectral response to X-ray energies above and below the Si Kα absorption edge. It was found that Si(Li) detectors with Pd electrodes exhibit consistently thinner effective Si dead layers than those with Au electrodes. It is demonstrated that the minimum thickness required for low-resistivity Pd electrodes is thinner than that required for low-resistivity Au electrodes, which further reduces the signal attenuation in Pd/Si(Li) detectors. A model based on Pd compensation of oxygen vacancies in the SiO2 at the entrance-window Si(Li) surface is proposed to explain the observed differences in detector dead-layer thickness
Keywords
X-ray detection and measurement; semiconductor counters; Au; Kα absorption edge; Pd; Pd compensation; Si(Li) detectors; Si:Li; detector spectral response; entrance-window electrodes; incomplete charge collection; low energy X-ray detection; minimum thickness; signal attenuation; thin dead layers; Conductivity; Electrodes; Geometry; Germanium; Gold; Laboratories; Radiation detectors; Silicon; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.289303
Filename
289303
Link To Document