Title :
Si(Li) detectors with thin dead layers for low energy X-ray detection
Author :
Rossington, C.S. ; Walton, J.T. ; Jaklevic, J.M.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Regions of incomplete charge collection, or dead layers, are compared for Si(Li) detectors fabricated with Au and Pd entrance-window electrodes. The dead layers were measured by characterizing the detector spectral response to X-ray energies above and below the Si Kα absorption edge. It was found that Si(Li) detectors with Pd electrodes exhibit consistently thinner effective Si dead layers than those with Au electrodes. It is demonstrated that the minimum thickness required for low-resistivity Pd electrodes is thinner than that required for low-resistivity Au electrodes, which further reduces the signal attenuation in Pd/Si(Li) detectors. A model based on Pd compensation of oxygen vacancies in the SiO2 at the entrance-window Si(Li) surface is proposed to explain the observed differences in detector dead-layer thickness
Keywords :
X-ray detection and measurement; semiconductor counters; Au; Kα absorption edge; Pd; Pd compensation; Si(Li) detectors; Si:Li; detector spectral response; entrance-window electrodes; incomplete charge collection; low energy X-ray detection; minimum thickness; signal attenuation; thin dead layers; Conductivity; Electrodes; Geometry; Germanium; Gold; Laboratories; Radiation detectors; Silicon; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on