• DocumentCode
    1096277
  • Title

    Self-aligned InP p-n junction diodes fabricated with ³He+bombardment

  • Author

    Capasso, F. ; Schwartz, B. ; Logan, R.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    5
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    p-n junction diodes have been defined in epitaxially grown InP layers with3He+ bombardment. The3He+ ions have been used to convert the exposed portions of the p-layers into semi-insulating regions (p = 109Ω.cm). I-V characteristics with good rectification and reverse currents of ≅ 200 nA at -2 V have been obtained. This simple self-aligned and planar isolation technology based on bombardment with3He+ offers significant advantages over protons in the fabrication of InP-based devices.
  • Keywords
    Conductivity; Dark current; Gold; Helium; Implants; Indium phosphide; Isolation technology; Metallization; P-n junctions; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25854
  • Filename
    1484230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096277