Self-aligned InP p-n junction diodes fabricated with ³He+bombardment

p-n junction diodes have been defined in epitaxially grown InP layers with³He+ bombardment. The³He+ ions have been used to convert the exposed portions of the p-layers into semi-insulating regions (p = 10⁹Ω.cm). I-V characteristics with good rectification and reverse currents of ≅ 200 nA at -2 V have been obtained. This simple self-aligned and planar isolation technology based on bombardment with³He+ offers significant advantages over protons in the fabrication of InP-based devices.